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  ? semiconductor components industries, llc, 2011 october, 2011 ? rev. 9 1 publication order number: bas16wt1/d bas16wt1g, SBAS16WT1G silicon switching diode features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol value unit continuous reverse voltage v r 75 v recurrent peak forward current i r 200 ma peak forward surge current pulse width = 10  s i fm(surge) 500 ma total power dissipation, one diode loaded t a = 25 c derate above 25 c mounted on a ceramic substrate (10 x 8 x 0.6 mm) p d 200 1.6 mw mw/ c operating and storage junction temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? ambient one diode loaded mounted on a ceramic substrate (10 x 8 x 0.6 mm) r  ja 625 c/w http://onsemi.com device package shipping ? ordering information sc ? 70 case 419 style 2 marking diagram bas16wt1g sc ? 70 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 3 cathode 1 anode a6 m   1 a6 = specific device code m = date code  = pb ? free package (*note: microdot may be in either location) SBAS16WT1G sc ? 70 (pb ? free) 3000 / tape & reel
bas16wt1g, SBAS16WT1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit forward voltage (i f = 1.0 ma) (i f = 10 ma) (i f = 50 ma) (i f = 150 ma) v f ? ? ? ? 715 866 1000 1250 mv reverse current (v r = 75 v) (v r = 75 v, t j = 150 c) (v r = 25 v, t j = 150 c) i r ? ? ? 1.0 50 30  a capacitance (v r = 0, f = 1.0 mhz) c d ? 2.0 pf reverse recovery time (i f = i r = 10 ma, r l = 50  ) (figure 1) t rr ? 6.0 ns stored charge (i f = 10 ma to v r = 6.0 v, r l = 500  ) (figure 2) qs ? 45 pc forward recovery voltage (i f = 10 ma, t r = 20 ns) (figure 3) v fr ? 1.75 v
bas16wt1g, SBAS16WT1G http://onsemi.com 3 figure 1. reverse recovery time equivalent test circuit figure 2. stored charge equivalent test circuit figure 3. forward recovery voltage equivalent test circuit v f 1 ns max 90% 10% t 100 ns t if t rr i rr 500  dut 50  duty cycle = 2% v f 90% 10% 20 ns max t 400 ns v c v cm t v cm  qa c 500  dut baw62 d1 243 pf 100 k  duty cycle = 2% v 120 ns t 2 ns max 10% 90% v v fr 1 k  450  50  dut duty cycle = 2% oscilloscope r  10 m  c  7 pf
bas16wt1g, SBAS16WT1G http://onsemi.com 4 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 v r , reverse voltage (volts) 0.64 0.60 0.56 0.52 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 4. forward voltage figure 5. leakage current figure 6. capacitance t a = -40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( a)
bas16wt1g, SBAS16WT1G http://onsemi.com 5 package dimensions sc ? 70 (sot ? 323) case 419 ? 04 issue n a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028  mm inches  scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bas16wt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


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